Walter Schottky Institute
Center for Nanotechnology and Nanomaterials

Martin Hetzl

Martin Hetzl

Room S106
Tel.: (+49) 089 289 11314


Contact morphology and revisited photocurrent dynamics in monolayer MoS2
Nature 2D Materials and Applications 1, 40 (2017)
E. Parzinger, M. Hetzl, U. Wurstbauer, A. Holleitner
Online Ref
Homoepitaxial growth of high quality (111)-oriented single crystalline diamond
Diam. Relat. Mater. 72, 41 - 46 (2017)
C. J. Widmann, M. Hetzl, S. Drieschner, C. E. Nebel
Online Ref
Polarity Control of Heteroepitaxial GaN Nanowires on Diamond
Nano Lett. 17, 3582-3590 (2017)
M. Hetzl, M. Kraut, T. Hoffmann, M. Stutzmann
Online Ref
Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires
Nanoscale 9, 7179-7188 (2017)
M. Hetzl, J. Winnerl, L. Francaviglia, M. Kraut, M. Doblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann
Online Ref
GaN nanowires on diamond
Mat. Sci. Semicon. Proc. 48, 65-78 (2016)
M. Hetzl, F. Schuster, A. Winnerl, S. Weiszer, M. Stutzmann
Online Ref
Strain-Induced Band Gap Engineering in Selectively Grown GaN–(Al,Ga)N Core–Shell Nanowire Heterostructures
Nano Lett. 16, 7098 (2016)
M. Hetzl, M. Kraut, J. Winnerl, L. Francaviglia, M. Döblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann
Online Ref
Doped GaN nanowires on diamond: Structural properties and charge carrier distribution
J. Appl. Phys. 117, 44307 (2015)
F. Schuster, A. Winnerl, S. Weiszer, M. Hetzl, J. A. Garrido, M. Stutzmann
Online Ref
Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions
F. Schuster, M. Hetzl, S. Weiszer, M. Wolfer, H. Kato, C. E. Nebel, J. A. Garrido, M. Stutzmann
Online Ref
Position-Controlled Growth of GaN Nanowires and Nanotubes onDiamond by Molecular Beam Epitaxy
Nano Lett. 15, 1773 (2015)
F. Schuster, M. Hetzl, S. Weiszer, J. A. Garrido, M. de la Mata, C. Magen, J. Arbiol, M. Stutzmann
Online Ref
Heteroepitaxial ZnO Films on Diamond: Optoelectronic Properties and theRole of Interface Polarity
J. Appl. Phys. 115, 213508 (2014)
F. Schuster, M. Hetzl, C. Magén, J. Arbiol, J. A. Garrido, M. Stutzmann
Online Ref
Influence of substrate material, orientation, and surface termination on GaN nanowire growth
J. Appl. Phys. 116, 54301 (2014)
F. Schuster, S. Weiszer, M. Hetzl, A. Winnerl, J. A. Garrido, M. Stutzmann
Online Ref

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